Technische Details FDB13AN06A0 ON Semiconductor
Description: MOSFET N-CH 60V 10.9A/62A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V.
Weitere Produktangebote FDB13AN06A0 nach Preis ab 1.49 EUR bis 7.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDB13AN06A0 | ON Semiconductor |
 Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 21600 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
FDB13AN06A0 | ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 21600 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
FDB13AN06A0 | onsemi |
Description: MOSFET N-CH 60V 10.9A/62A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
auf Bestellung 6400 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
FDB13AN06A0 | ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
FDB13AN06A0 | onsemi / Fairchild |
MOSFETs N-Channel PowerTrench |
auf Bestellung 2951 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
FDB13AN06A0 | onsemi |
MOSFETs N-Channel PowerTrench |
auf Bestellung 2718 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
FDB13AN06A0 | onsemi |
Description: MOSFET N-CH 60V 10.9A/62A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
auf Bestellung 7384 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
FDB13AN06A0 | ON-Semiconductor |
Transistor N-MOSFET; 60V; 10V; 13,5mOhm; 62A; 115W; -55°C ~ 175°C; FDB13AN06A0 TFDB13AN06A0 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 194 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
|
|
FDB13AN06A0 | ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDB13AN06A0 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 21600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.65 EUR |
| 1600+ | 1.58 EUR |
| 2400+ | 1.49 EUR |
| FDB13AN06A0 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 21600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.69 EUR |
| 1600+ | 1.64 EUR |
| 2400+ | 1.57 EUR |
| FDB13AN06A0 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 10.9A/62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 60V 10.9A/62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.78 EUR |
| 1600+ | 1.65 EUR |
| FDB13AN06A0 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.39 EUR |
| FDB13AN06A0 |
|
Hersteller: onsemi / Fairchild
MOSFETs N-Channel PowerTrench
MOSFETs N-Channel PowerTrench
auf Bestellung 2951 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 2.28 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.98 EUR |
| 800+ | 1.82 EUR |
| FDB13AN06A0 |
|
Hersteller: onsemi
MOSFETs N-Channel PowerTrench
MOSFETs N-Channel PowerTrench
auf Bestellung 2718 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.86 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2.32 EUR |
| 800+ | 1.82 EUR |
| FDB13AN06A0 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 10.9A/62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 60V 10.9A/62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 7384 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.59 EUR |
| 10+ | 3.63 EUR |
| 100+ | 2.5 EUR |
| FDB13AN06A0 |
|
Hersteller: ON-Semiconductor
Transistor N-MOSFET; 60V; 10V; 13,5mOhm; 62A; 115W; -55°C ~ 175°C; FDB13AN06A0 TFDB13AN06A0
Anzahl je Verpackung: 10 Stücke
Transistor N-MOSFET; 60V; 10V; 13,5mOhm; 62A; 115W; -55°C ~ 175°C; FDB13AN06A0 TFDB13AN06A0
Anzahl je Verpackung: 10 Stücke
auf Bestellung 194 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 7.06 EUR |
| FDB13AN06A0 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)