FDB13AN06A0 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 10.9A/62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 832 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.41 EUR |
| 10+ | 1.96 EUR |
| 100+ | 1.70 EUR |
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Technische Details FDB13AN06A0 onsemi
Description: MOSFET N-CH 60V 10.9A/62A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V.
Weitere Produktangebote FDB13AN06A0 nach Preis ab 1.65 EUR bis 5.69 EUR
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FDB13AN06A0 | Hersteller : ON Semiconductor |
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FDB13AN06A0 | Hersteller : ON Semiconductor |
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FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
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FDB13AN06A0 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 10.9A/62A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
Produkt ist nicht verfügbar |