FDB13AN06A0 ONSEMI
Hersteller: ONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 793 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 2.26 EUR |
| 36+ | 2.02 EUR |
| 42+ | 1.73 EUR |
| 44+ | 1.63 EUR |
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Technische Details FDB13AN06A0 ONSEMI
Description: MOSFET N-CH 60V 10.9A/62A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V.
Weitere Produktangebote FDB13AN06A0 nach Preis ab 1.63 EUR bis 5.65 EUR
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FDB13AN06A0 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Power dissipation: 115W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 793 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB13AN06A0 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 10.9A/62A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
auf Bestellung 832 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB13AN06A0 | Hersteller : onsemi / Fairchild |
MOSFETs N-Channel PowerTrench |
auf Bestellung 6109 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 5600 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDB13AN06A0 | Hersteller : ON-Semicoductor |
Transistor N-MOSFET; 60V; 10V; 13,5mOhm; 62A; 115W; -55°C ~ 175°C; FDB13AN06A0 TFDB13AN06A0 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 194 Stücke: Lieferzeit 7-14 Tag (e) |
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FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB13AN06A0 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 10.9A/62A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
Produkt ist nicht verfügbar |