FDB16AN08A0 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 75V 9A/58A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 58A, 10V
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Technische Details FDB16AN08A0 onsemi
Description: MOSFET N-CH 75V 9A/58A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 135W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 58A, 10V.
Weitere Produktangebote FDB16AN08A0 nach Preis ab 2.23 EUR bis 6.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FDB16AN08A0 | onsemi / Fairchild |
MOSFETs Discrete Auto N-Ch UltraFET Trench |
auf Bestellung 2395 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB16AN08A0 | onsemi |
Description: MOSFET N-CH 75V 9A/58A D2PAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 58A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
auf Bestellung 2234 Stücke: Lieferzeit 10-14 Tag (e) |
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 |
FDB16AN08A0 | onsemi |
MOSFETs Discrete Auto N-Ch UltraFET Trench |
auf Bestellung 2386 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| FDB16AN08A0 | fairchild |
to-263/d2-pak |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDB16AN08A0 |
|
Hersteller: onsemi / Fairchild
MOSFETs Discrete Auto N-Ch UltraFET Trench
MOSFETs Discrete Auto N-Ch UltraFET Trench
auf Bestellung 2395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.66 EUR |
| 10+ | 4.36 EUR |
| 100+ | 3.03 EUR |
| 800+ | 2.43 EUR |
| 2400+ | 2.23 EUR |
| FDB16AN08A0 |
|
Hersteller: onsemi
Description: MOSFET N-CH 75V 9A/58A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Description: MOSFET N-CH 75V 9A/58A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
auf Bestellung 2234 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.95 EUR |
| 10+ | 4.53 EUR |
| 100+ | 3.17 EUR |
| FDB16AN08A0 |
|
Hersteller: onsemi
MOSFETs Discrete Auto N-Ch UltraFET Trench
MOSFETs Discrete Auto N-Ch UltraFET Trench
auf Bestellung 2386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.97 EUR |
| 10+ | 4.57 EUR |
| 100+ | 3.19 EUR |
| 500+ | 2.59 EUR |
| 800+ | 2.45 EUR |
| FDB16AN08A0 |
|
Hersteller: fairchild
to-263/d2-pak
to-263/d2-pak
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)