FDB2710 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 250V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V
auf Bestellung 371 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 11.41 EUR |
| 10+ | 9.59 EUR |
| 100+ | 7.76 EUR |
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Technische Details FDB2710 onsemi
Description: MOSFET N-CH 250V 50A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V, Power Dissipation (Max): 260W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V.
Weitere Produktangebote FDB2710 nach Preis ab 6.24 EUR bis 11.65 EUR
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FDB2710 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 50A 3-Pin(2+Tab) D2PAK T/R |
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FDB2710 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 50A 3-Pin(2+Tab) D2PAK T/R |
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FDB2710 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 50A 3-Pin(2+Tab) D2PAK T/R |
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FDB2710 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK Mounting: SMD Power dissipation: 260W Gate charge: 101nC Polarisation: unipolar Drain current: 50A Kind of channel: enhanced Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: D2PAK On-state resistance: 36.3mΩ Anzahl je Verpackung: 1 Stücke |
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FDB2710 | Hersteller : onsemi |
Description: MOSFET N-CH 250V 50A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V |
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FDB2710 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK Mounting: SMD Power dissipation: 260W Gate charge: 101nC Polarisation: unipolar Drain current: 50A Kind of channel: enhanced Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: D2PAK On-state resistance: 36.3mΩ |
Produkt ist nicht verfügbar |