FDB33N25TM ON Semiconductor
auf Bestellung 6400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 1.68 EUR |
| 2400+ | 1.61 EUR |
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Technische Details FDB33N25TM ON Semiconductor
Description: MOSFET N-CH 250V 33A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V, Power Dissipation (Max): 235W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V.
Weitere Produktangebote FDB33N25TM nach Preis ab 1.59 EUR bis 5.49 EUR
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FDB33N25TM | Hersteller : ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 33A Power dissipation: 235W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 659 Stücke: Lieferzeit 7-14 Tag (e) |
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FDB33N25TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 33A Power dissipation: 235W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 659 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB33N25TM | Hersteller : onsemi / Fairchild |
MOSFET 250V N-Ch MOSFET |
auf Bestellung 5879 Stücke: Lieferzeit 14-28 Tag (e) |
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| FDB33N25TM | Hersteller : ON-Semicoductor |
N-MOSFET 33A 250V 235W 0.094Ω FDB33N25TM TFDB33N25TM Anzahl je Verpackung: 10 Stücke |
auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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FDB33N25TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R |
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FDB33N25TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R |
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FDB33N25TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R |
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FDB33N25TM | Hersteller : onsemi |
Description: MOSFET N-CH 250V 33A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V |
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FDB33N25TM | Hersteller : onsemi |
Description: MOSFET N-CH 250V 33A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V |
Produkt ist nicht verfügbar |