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FDB3632

FDB3632 onsemi


fdp3632-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 100V 12A/80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 5600 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.23 EUR
1600+2.11 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDB3632 onsemi

Description: MOSFET N-CH 100V 12A/80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.

Weitere Produktangebote FDB3632 nach Preis ab 2.34 EUR bis 6.62 EUR

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FDB3632 FDB3632 onsemi / Fairchild fdp3632-d.pdf MOSFETs N-Channel PowerTrench
auf Bestellung 6936 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.67 EUR
10+4.17 EUR
25+3.89 EUR
100+3.03 EUR
500+2.78 EUR
800+2.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDB3632 FDB3632 onsemi fdp3632-d.pdf MOSFETs N-Channel PowerTrench
auf Bestellung 10562 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.25 EUR
10+4.12 EUR
100+2.9 EUR
500+2.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDB3632 FDB3632 onsemi fdp3632-d.pdf Description: MOSFET N-CH 100V 12A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 5618 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.62 EUR
10+4.35 EUR
100+3.06 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDB3632 fdp3632-d.pdf
FDB3632
Hersteller: onsemi / Fairchild
MOSFETs N-Channel PowerTrench
auf Bestellung 6936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.67 EUR
10+4.17 EUR
25+3.89 EUR
100+3.03 EUR
500+2.78 EUR
800+2.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDB3632 fdp3632-d.pdf
FDB3632
Hersteller: onsemi
MOSFETs N-Channel PowerTrench
auf Bestellung 10562 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.25 EUR
10+4.12 EUR
100+2.9 EUR
500+2.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDB3632 fdp3632-d.pdf
FDB3632
Hersteller: onsemi
Description: MOSFET N-CH 100V 12A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 5618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.62 EUR
10+4.35 EUR
100+3.06 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH