FDB3682 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 6A/32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
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Technische Details FDB3682 onsemi
Description: MOSFET N-CH 100V 6A/32A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V.
Weitere Produktangebote FDB3682 nach Preis ab 1.63 EUR bis 4.95 EUR
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FDB3682 | onsemi / Fairchild |
MOSFET 100V N-Channel Pwr Trench |
auf Bestellung 7224 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3682 | onsemi |
MOSFETs 100V N-Channel Pwr Trench |
auf Bestellung 772 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3682 | onsemi |
Description: MOSFET N-CH 100V 6A/32A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V |
auf Bestellung 1324 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDB3682 | fairchild |
to-263/d2-pak |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDB3682 |
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Hersteller: onsemi / Fairchild
MOSFET 100V N-Channel Pwr Trench
MOSFET 100V N-Channel Pwr Trench
auf Bestellung 7224 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.73 EUR |
| 10+ | 3.12 EUR |
| 100+ | 2.46 EUR |
| 500+ | 2.45 EUR |
| 800+ | 1.76 EUR |
| 2400+ | 1.67 EUR |
| 4800+ | 1.63 EUR |
| FDB3682 |
|
Hersteller: onsemi
MOSFETs 100V N-Channel Pwr Trench
MOSFETs 100V N-Channel Pwr Trench
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.7 EUR |
| 10+ | 3.04 EUR |
| 100+ | 2.11 EUR |
| 500+ | 2.01 EUR |
| 800+ | 1.66 EUR |
| FDB3682 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 6A/32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Description: MOSFET N-CH 100V 6A/32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
auf Bestellung 1324 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.95 EUR |
| 10+ | 3.22 EUR |
| 100+ | 2.23 EUR |
| FDB3682 |
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Hersteller: fairchild
to-263/d2-pak
to-263/d2-pak
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)