FDB86135 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 2.4W (Ta), 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 800+ | 6.1 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
800 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FDB86135 onsemi
Description: MOSFET N-CH 100V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V, Power Dissipation (Max): 2.4W (Ta), 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V.
Weitere Produktangebote FDB86135 nach Preis ab 4.69 EUR bis 15.66 EUR
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FDB86135 | ON Semiconductor |
Trans MOSFET N-CH Si 100V 176A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 438 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB86135 | ON Semiconductor |
Trans MOSFET N-CH Si 100V 176A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 438 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB86135 | onsemi |
Description: MOSFET N-CH 100V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V Power Dissipation (Max): 2.4W (Ta), 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB86135 | onsemi |
MOSFETs PWM PFC COMBO |
auf Bestellung 12981 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDB86135 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 100V 176A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 100V 176A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 438 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 6.95 EUR |
| 28+ | 6.02 EUR |
| 100+ | 5.43 EUR |
| 250+ | 4.69 EUR |
| FDB86135 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 100V 176A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 100V 176A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 438 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 6.95 EUR |
| 28+ | 6.26 EUR |
| 100+ | 5.72 EUR |
| 250+ | 5.08 EUR |
| FDB86135 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 2.4W (Ta), 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 2.4W (Ta), 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.27 EUR |
| 10+ | 10.39 EUR |
| 50+ | 8.29 EUR |
| 100+ | 7.62 EUR |
| FDB86135 |
|
Hersteller: onsemi
MOSFETs PWM PFC COMBO
MOSFETs PWM PFC COMBO
auf Bestellung 12981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.66 EUR |
| 10+ | 11.04 EUR |
| 100+ | 8.95 EUR |
| 500+ | 7.94 EUR |
| 800+ | 7.1 EUR |