FDB86366-F085 onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 1+ | 4.49 EUR |
| 10+ | 3.89 EUR |
| 25+ | 3.78 EUR |
| 100+ | 3.17 EUR |
| 250+ | 3.08 EUR |
| 500+ | 2.76 EUR |
| 800+ | 2.31 EUR |
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Technische Details FDB86366-F085 onsemi / Fairchild
Description: MOSFET N-CH 80V 110A D2PAK, Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Last Time Buy, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 176W (Tj).
Weitere Produktangebote FDB86366-F085 nach Preis ab 2.81 EUR bis 6.11 EUR
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FDB86366-F085 | onsemi |
 Description: MOSFET N-CH 80V 110A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Qualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 176W (Tj) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 272 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDB86366-F085 | ON Semiconductor |
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auf Bestellung 120 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDB86366-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 110A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tj)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 110A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tj)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.11 EUR |
| 10+ | 4 EUR |
| 100+ | 2.81 EUR |
| FDB86366-F085 |
|
Hersteller: ON Semiconductor
auf Bestellung 120 Stücke:
Lieferzeit 21-28 Tag (e)