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FDB86366-F085

FDB86366-F085 onsemi

fdb86366_f085-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 282 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.5 EUR
10+ 5.47 EUR
100+ 4.43 EUR
Mindestbestellmenge: 4
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Technische Details FDB86366-F085 onsemi

Description: MOSFET N-CH 80V 110A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V, Power Dissipation (Max): 176W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

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FDB86366-F085 FDB86366-F085 Hersteller : onsemi / Fairchild FDB86366_F085_D-2311810.pdf MOSFET 80V 110A N-Chnl PowerTrench MOSFET
auf Bestellung 2300 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.63 EUR
10+ 5.75 EUR
25+ 5.59 EUR
100+ 4.68 EUR
250+ 4.55 EUR
500+ 4.08 EUR
800+ 3.41 EUR
Mindestbestellmenge: 8
FDB86366-F085 Hersteller : ON Semiconductor fdb86366_f085-d.pdf
auf Bestellung 120 Stücke:
Lieferzeit 21-28 Tag (e)
FDB86366-F085 FDB86366-F085 Hersteller : onsemi fdb86366_f085-d.pdf Description: MOSFET N-CH 80V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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