FDB86566-F085 onsemi / Fairchild
auf Bestellung 1600 Stücke:
Lieferzeit 409-413 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.02 EUR |
| 10+ | 4.52 EUR |
| 25+ | 4.28 EUR |
| 100+ | 3.64 EUR |
| 500+ | 2.99 EUR |
| 800+ | 2.46 EUR |
| 2400+ | 2.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDB86566-F085 onsemi / Fairchild
Description: MOSFET N-CH 60V 110A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V, Power Dissipation (Max): 176W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V.
Weitere Produktangebote FDB86566-F085
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
FDB86566-F085 | Hersteller : onsemi |
 Description: MOSFET N-CH 60V 110A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Power Dissipation (Max): 176W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V |
Produkt ist nicht verfügbar |
|
|
|
FDB86566-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 110A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Power Dissipation (Max): 176W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V |
Produkt ist nicht verfügbar |