FDB9406L-F085

FDB9406L-F085 ON Semiconductor / Fairchild


FDB9406L_F085-D-1806362.pdf Hersteller: ON Semiconductor / Fairchild
MOSFET N-Channel Power Trench MOSFET
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Technische Details FDB9406L-F085 ON Semiconductor / Fairchild

Description: MOSFET N-CH 40V 110A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V, Power Dissipation (Max): 176W (Tj), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 20 V, Qualification: AEC-Q101.

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FDB9406L-F085 FDB9406L-F085 Hersteller : onsemi fdb9406l_f085-d.pdf Description: MOSFET N-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 20 V
Qualification: AEC-Q101
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