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FDBL0200N100

FDBL0200N100 onsemi


fdbl0200n100-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.85 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDBL0200N100 onsemi

Description: MOSFET N-CH 100V 300A 8HPSOF, Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-HPSOF, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 429W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote FDBL0200N100 nach Preis ab 5.97 EUR bis 10.31 EUR

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FDBL0200N100 FDBL0200N100 Hersteller : onsemi / Fairchild FDBL0200N100-D.PDF MOSFETs 100 V N-Channel PowerTrench MOSFET
auf Bestellung 610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.79 EUR
10+7.67 EUR
100+6.88 EUR
500+6.85 EUR
1000+6.81 EUR
2000+5.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0200N100 FDBL0200N100 Hersteller : onsemi fdbl0200n100-d.pdf Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 4068 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.31 EUR
10+7.97 EUR
100+7.16 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0200N100 Hersteller : ONN fdbl0200n100-d.pdf
auf Bestellung 650 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH