
FDBL86063-F085 onsemi

Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2000+ | 5.53 EUR |
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Technische Details FDBL86063-F085 onsemi
Description: MOSFET N-CH 100V 240A 8HPSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V, Power Dissipation (Max): 357W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-HPSOF, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V.
Weitere Produktangebote FDBL86063-F085 nach Preis ab 5.53 EUR bis 12.57 EUR
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FDBL86063-F085 | Hersteller : onsemi |
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auf Bestellung 283 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86063-F085 | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V |
auf Bestellung 3965 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86063-F085 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 240A; 357W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 240A Power dissipation: 357W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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FDBL86063_F085 | Hersteller : onsemi |
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Produkt ist nicht verfügbar |
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FDBL86063-F085 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 240A; 357W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 240A Power dissipation: 357W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |