FDBL86363-F085AW onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details FDBL86363-F085AW onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 8-HPSOF, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 357W (Tj), Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).