FDC2612A onsemi
Hersteller: onsemi
Description: N-CHANNEL POWERTRENCH MOSFET 200
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TSOT-23-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
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Technische Details FDC2612A onsemi
Description: N-CHANNEL POWERTRENCH MOSFET 200, Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TSOT-23-6, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Bulk.