Weitere Produktangebote FDC3601N nach Preis ab 0.31 EUR bis 2.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDC3601N | ON Semiconductor |
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R |
auf Bestellung 2497 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC3601N | ON Semiconductor |
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC3601N | onsemi |
Description: MOSFET 2N-CH 100V 1A SSOT6Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V Current - Continuous Drain (Id) @ 25°C: 1A Drain to Source Voltage (Vdss): 100V Power - Max: 700mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC3601N | ON Semiconductor |
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC3601N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 976mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2879 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC3601N | ON Semiconductor |
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC3601N | onsemi |
MOSFETs Dual N-Ch 100V Spec Power Trench |
auf Bestellung 11988 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC3601N | onsemi |
Description: MOSFET 2N-CH 100V 1A SSOT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 |
auf Bestellung 20404 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC3601N | ONSEMI |
Description: ONSEMI - FDC3601N - Dual-MOSFET, n-Kanal, 100 V, 1 A, 0.5 ohmtariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 1A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 100V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SuperSOT Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.5ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 960mW Betriebstemperatur, max.: 150°C |
auf Bestellung 52178 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC3601N | ONSEMI |
Description: ONSEMI - FDC3601N - Dual-MOSFET, n-Kanal, 100 V, 1 A, 0.5 ohmtariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 1A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 100V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SuperSOT Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.5ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 960mW Betriebstemperatur, max.: 150°C |
auf Bestellung 52178 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDC3601N |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 510+ | 0.33 EUR |
| FDC3601N |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1460+ | 0.44 EUR |
| FDC3601N |
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Hersteller: onsemi
Description: MOSFET 2N-CH 100V 1A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A
Drain to Source Voltage (Vdss): 100V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 100V 1A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A
Drain to Source Voltage (Vdss): 100V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.46 EUR |
| 6000+ | 0.43 EUR |
| FDC3601N |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 232+ | 0.74 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.49 EUR |
| 6000+ | 0.48 EUR |
| FDC3601N |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2879 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 75+ | 1.14 EUR |
| 115+ | 0.75 EUR |
| 137+ | 0.62 EUR |
| 178+ | 0.48 EUR |
| 250+ | 0.4 EUR |
| 500+ | 0.38 EUR |
| FDC3601N |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 100V 1A 6-Pin TSOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 137+ | 1.26 EUR |
| 196+ | 0.84 EUR |
| 231+ | 0.69 EUR |
| 280+ | 0.55 EUR |
| 500+ | 0.38 EUR |
| 3000+ | 0.31 EUR |
| FDC3601N |
![]() |
Hersteller: onsemi
MOSFETs Dual N-Ch 100V Spec Power Trench
MOSFETs Dual N-Ch 100V Spec Power Trench
auf Bestellung 11988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.86 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.52 EUR |
| FDC3601N |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 1A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET 2N-CH 100V 1A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 20404 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.88 EUR |
| 18+ | 1.18 EUR |
| 50+ | 0.87 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| FDC3601N |
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Hersteller: ONSEMI
Description: ONSEMI - FDC3601N - Dual-MOSFET, n-Kanal, 100 V, 1 A, 0.5 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 1A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SuperSOT
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.5ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 960mW
Betriebstemperatur, max.: 150°C
Description: ONSEMI - FDC3601N - Dual-MOSFET, n-Kanal, 100 V, 1 A, 0.5 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 1A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SuperSOT
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.5ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 960mW
Betriebstemperatur, max.: 150°C
auf Bestellung 52178 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 117+ | 2.15 EUR |
| 187+ | 1.25 EUR |
| 287+ | 0.75 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |
| FDC3601N |
![]() |
Hersteller: ONSEMI
Description: ONSEMI - FDC3601N - Dual-MOSFET, n-Kanal, 100 V, 1 A, 0.5 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: -
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 1A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SuperSOT
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.5ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 960mW
Betriebstemperatur, max.: 150°C
Description: ONSEMI - FDC3601N - Dual-MOSFET, n-Kanal, 100 V, 1 A, 0.5 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: -
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 1A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SuperSOT
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.5ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 960mW
Betriebstemperatur, max.: 150°C
auf Bestellung 52178 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 117+ | 2.15 EUR |
| 187+ | 1.25 EUR |
| 287+ | 0.75 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |





