FDC5661N onsemi

Description: FET 60V 50.0 MOHM SSOT6, Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TSOT-23-6, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).