Technische Details FDC6301N ON Semiconductor
Description: MOSFET 2N-CH 25V 0.22A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 220mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active.
Weitere Produktangebote FDC6301N nach Preis ab 0.17 EUR bis 1.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDC6301N | ON Semiconductor |
 Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | ON Semiconductor |
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | ON Semiconductor |
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | ON Semiconductor |
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | ON Semiconductor |
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | ON Semiconductor |
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | ON Semiconductor |
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | onsemi |
Description: MOSFET 2N-CH 25V 0.22A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC6301N | ON Semiconductor |
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6 Type of transistor: N-MOSFET x2 Gate-source voltage: ±0.5V; ±8V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 9Ω Mounting: SMD Power dissipation: 0.9W Gate charge: 0.7nC Polarisation: unipolar Technology: PowerTrench® Drain current: 0.22A Kind of channel: enhancement Drain-source voltage: 25V |
auf Bestellung 1161 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | onsemi |
MOSFETs SSOT-6 N-CH 25V |
auf Bestellung 21765 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC6301N | onsemi |
Description: MOSFET 2N-CH 25V 0.22A SSOT6 Part Status: Active Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Current - Continuous Drain (Id) @ 25°C: 220mA Drain to Source Voltage (Vdss): 25V Power - Max: 700mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.17 EUR |
| FDC6301N |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.17 EUR |
| FDC6301N |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.17 EUR |
| FDC6301N |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.2 EUR |
| FDC6301N |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.23 EUR |
| 9000+ | 0.21 EUR |
| FDC6301N |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.25 EUR |
| 6000+ | 0.21 EUR |
| FDC6301N |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.25 EUR |
| FDC6301N |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 0.22A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: MOSFET 2N-CH 25V 0.22A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| FDC6301N |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.37 EUR |
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.23 EUR |
| FDC6301N |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Gate-source voltage: ±0.5V; ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 9Ω
Mounting: SMD
Power dissipation: 0.9W
Gate charge: 0.7nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.22A
Kind of channel: enhancement
Drain-source voltage: 25V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Gate-source voltage: ±0.5V; ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 9Ω
Mounting: SMD
Power dissipation: 0.9W
Gate charge: 0.7nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.22A
Kind of channel: enhancement
Drain-source voltage: 25V
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 0.79 EUR |
| 163+ | 0.52 EUR |
| 228+ | 0.37 EUR |
| 265+ | 0.32 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.19 EUR |
| FDC6301N |
|
Hersteller: onsemi
MOSFETs SSOT-6 N-CH 25V
MOSFETs SSOT-6 N-CH 25V
auf Bestellung 21765 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| FDC6301N |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 0.22A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 25V 0.22A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 30+ | 0.7 EUR |
| 50+ | 0.51 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |