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Technische Details FDC855N ON Semiconductor
Description: MOSFET N-CH 30V 6.1A SUPERSOT6, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SuperSOT™-6, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDC855N nach Preis ab 0.23 EUR bis 1.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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FDC855N | ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC855N | onsemi |
Description: MOSFET N-CH 30V 6.1A SUPERSOT6Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC855N | ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
auf Bestellung 3946 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC855N | ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC855N | ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
auf Bestellung 954 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC855N | ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC855N | ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
auf Bestellung 1671 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC855N | ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
auf Bestellung 1671 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC855N | onsemi / Fairchild |
MOSFETs 30V Single NCh Logic Level PowerTrench |
auf Bestellung 12776 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC855N | onsemi |
Description: MOSFET N-CH 30V 6.1A SUPERSOT6Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 3487 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDC855N | FAIRCHILD |
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auf Bestellung 2660 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDC855N |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.45 EUR |
| 9000+ | 0.35 EUR |
| FDC855N |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.1A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 6.1A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.46 EUR |
| FDC855N |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
auf Bestellung 3946 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1300+ | 0.5 EUR |
| FDC855N |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 329+ | 0.52 EUR |
| 454+ | 0.38 EUR |
| 587+ | 0.29 EUR |
| 1000+ | 0.25 EUR |
| FDC855N |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 331+ | 0.52 EUR |
| 474+ | 0.36 EUR |
| 519+ | 0.32 EUR |
| FDC855N |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 237+ | 0.74 EUR |
| 329+ | 0.51 EUR |
| 454+ | 0.36 EUR |
| 587+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| FDC855N |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
auf Bestellung 1671 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 227+ | 0.77 EUR |
| 229+ | 0.75 EUR |
| 250+ | 0.73 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.69 EUR |
| FDC855N |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
auf Bestellung 1671 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 223+ | 0.79 EUR |
| 225+ | 0.75 EUR |
| 227+ | 0.71 EUR |
| 229+ | 0.68 EUR |
| 250+ | 0.64 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.58 EUR |
| FDC855N |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs 30V Single NCh Logic Level PowerTrench
MOSFETs 30V Single NCh Logic Level PowerTrench
auf Bestellung 12776 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.4 EUR |
| 10+ | 1 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| 3000+ | 0.48 EUR |
| FDC855N |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.1A SUPERSOT6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 30V 6.1A SUPERSOT6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 3487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 19+ | 1.13 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.51 EUR |
| FDC855N |
![]() |
Hersteller: FAIRCHILD
auf Bestellung 2660 Stücke:
Lieferzeit 21-28 Tag (e)



