FDD18N20LZ onsemi
Hersteller: onsemi
Description: MOSFET N-CH 200V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 2500+ | 1.2 EUR |
| 5000+ | 1.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDD18N20LZ onsemi
Description: MOSFET N-CH 200V 16A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V.
Weitere Produktangebote FDD18N20LZ nach Preis ab 1.3 EUR bis 4.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDD18N20LZ | onsemi / Fairchild |
MOSFETs 200V NChannel UniFET |
auf Bestellung 56561 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
FDD18N20LZ | onsemi |
Description: MOSFET N-CH 200V 16A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V |
auf Bestellung 8736 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
FDD18N20LZ | onsemi |
MOSFETs 200V NChannel UniFET |
auf Bestellung 51334 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDD18N20LZ |
|
Hersteller: onsemi / Fairchild
MOSFETs 200V NChannel UniFET
MOSFETs 200V NChannel UniFET
auf Bestellung 56561 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.06 EUR |
| 10+ | 2.41 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.39 EUR |
| 2500+ | 1.3 EUR |
| FDD18N20LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V
Description: MOSFET N-CH 200V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V
auf Bestellung 8736 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.29 EUR |
| 10+ | 2.78 EUR |
| 100+ | 1.91 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.44 EUR |
| FDD18N20LZ |
|
Hersteller: onsemi
MOSFETs 200V NChannel UniFET
MOSFETs 200V NChannel UniFET
auf Bestellung 51334 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4.35 EUR |
| 10+ | 2.82 EUR |
| 100+ | 1.94 EUR |