Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote FDD2582 nach Preis ab 0.75 EUR bis 2.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDD2582 | Hersteller : onsemi / Fairchild |
MOSFETs N-Ch PowerTrench |
auf Bestellung 6502 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
FDD2582 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 3.7/21A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 7A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 25 V |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDD2582 | Hersteller : onsemi |
MOSFETs N-Ch PowerTrench |
auf Bestellung 5738 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| FDD2582 | Hersteller : ONS/FAI |
MOSFET N-CH 150V 3.7/21A TO252AA Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
FDD2582 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 3.7/21A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 7A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
FDD2582 | Hersteller : ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK Technology: PowerTrench® Mounting: SMD Polarisation: unipolar Gate charge: 25nC On-state resistance: 172mΩ Drain current: 21A Gate-source voltage: ±20V Power dissipation: 95W Drain-source voltage: 150V Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |


