FDD3510H onsemi / Fairchild

Description: MOSFET N/P-CH 80V 4.3A TO252, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 4.3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V, Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A, Drain to Source Voltage (Vdss): 80V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Common Drain, Mounting Type: Surface Mount, Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Packaging: Tape & Reel (TR).