Technische Details FDD3510H onsemi / Fairchild
Description: MOSFET N/P-CH 80V 4.3A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A, Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V, Rds On (Max) @ Id, Vgs: 80mOhm @ 4.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK).
Weitere Produktangebote FDD3510H
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FDD3510H | Hersteller : ON Semiconductor |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD3510H | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 80V 4.3A/2.8A 5-Pin(4+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD3510H | Hersteller : onsemi |
Description: MOSFET N/P-CH 80V 4.3A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V Rds On (Max) @ Id, Vgs: 80mOhm @ 4.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) |
Produkt ist nicht verfügbar |