FDD4685 onsemi
Hersteller: onsemiDescription: MOSFET P-CH 40V 8.4A/32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.51 EUR |
| 5000+ | 0.47 EUR |
| 7500+ | 0.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDD4685 onsemi
Description: ONSEMI - FDD4685 - Leistungs-MOSFET, p-Kanal, 40 V, 32 A, 0.027 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 32A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.6V, euEccn: NLR, Verlustleistung: 69W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.027ohm, SVHC: Lead (25-Jun-2025).
Weitere Produktangebote FDD4685 nach Preis ab 0.39 EUR bis 2.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 903 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD4685 | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -32A Power dissipation: 69W Case: DPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 893 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD4685 | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -32A Power dissipation: 69W Case: DPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 893 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD4685 | Hersteller : onsemi |
Description: MOSFET P-CH 40V 8.4A/32A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V |
auf Bestellung 8342 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD4685 | Hersteller : onsemi |
MOSFETs -40V P-Channel PowerTrench MOSFET |
auf Bestellung 11844 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD4685 | Hersteller : UMW |
Description: MOSFET P-CH 40V 8.4A/32A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V |
auf Bestellung 1318 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD4685 | Hersteller : ONSEMI |
Description: ONSEMI - FDD4685 - Leistungs-MOSFET, p-Kanal, 40 V, 32 A, 0.027 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 32A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 69W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.027ohm SVHC: Lead (25-Jun-2025) |
auf Bestellung 23795 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDD4685 | Hersteller : ONSEMI |
Description: ONSEMI - FDD4685 - MOSFET, P-KANAL, SMD, TO-252 tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 32A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 69W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.027ohm SVHC: Lead (25-Jun-2025) |
auf Bestellung 23795 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD4685 | Hersteller : UMW |
Description: MOSFET P-CH 40V 8.4A/32A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V |
Produkt ist nicht verfügbar |