FDD4685TF_SB82135 onsemi
Hersteller: onsemi
Description: MOSFET P-CH 40V 8.4A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details FDD4685TF_SB82135 onsemi
Description: MOSFET P-CH 40V 8.4A/32A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Drain to Source Voltage (Vdss): 40 V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
