| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.33 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.09 EUR |
| 2500+ | 1.02 EUR |
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Technische Details FDD5680 onsemi / Fairchild
Description: MOSFET N-CH 60V 8.5A TO252, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 60W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V.
Weitere Produktangebote FDD5680 nach Preis ab 1.31 EUR bis 3.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FDD5680 | onsemi |
 Description: MOSFET N-CH 60V 8.5A TO252Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1593 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDD5680 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 8.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1593 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.81 EUR |
| 10+ | 2.44 EUR |
| 50+ | 1.84 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.31 EUR |