auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.23 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDD5680 UMW
Description: MOSFET N-CH 60V 8.5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V, Power Dissipation (Max): 2.8W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V.
Weitere Produktangebote FDD5680 nach Preis ab 0.86 EUR bis 2.94 EUR
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FDD5680 | Hersteller : onsemi / Fairchild |
 MOSFETs N-Ch PowerTrench |
auf Bestellung 915 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD5680 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 8.5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V |
auf Bestellung 1283 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDD5680 | Hersteller : FAIRCHILD |
07+ TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDD5680 | Hersteller : FAIRCHILD |
TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDD5680 | Hersteller : fairchild |
to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD5680 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD5680 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 8.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V |
Produkt ist nicht verfügbar |
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FDD5680 | Hersteller : UMW |
Description: MOSFET N-CH 60V 8.5A DPAK Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| FDD5680 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 100A; 60W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.5A Pulsed drain current: 100A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |