| Anzahl | Preis |
|---|---|
| 15+ | 1.23 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
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Technische Details FDD5680 UMW
Description: MOSFET N-CH 60V 8.5A TO252, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 60W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V.
Weitere Produktangebote FDD5680 nach Preis ab 0.86 EUR bis 2.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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FDD5680 | onsemi / Fairchild |
 MOSFETs N-Ch PowerTrench |
auf Bestellung 915 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD5680 | onsemi |
Description: MOSFET N-CH 60V 8.5A TO252 Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1283 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDD5680 | fairchild |
to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDD5680 |
|
Hersteller: onsemi / Fairchild
MOSFETs N-Ch PowerTrench
MOSFETs N-Ch PowerTrench
auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.8 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.22 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.86 EUR |
| FDD5680 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 8.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1283 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.94 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.93 EUR |
| FDD5680 |
|
Hersteller: fairchild
to-252/d-pak
to-252/d-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH