FDD5690 ON-Semiconductor
Hersteller: ON-Semiconductor
N-Channel 60V 30A (Tc) 3.2W (Ta), 50W (Tc) Surface Mount TO-252 FDD5690 ON Semiconductor TFDD5690
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 2.31 EUR |
Produktrezensionen
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Technische Details FDD5690 ON-Semiconductor
Description: MOSFET N-CH 60V 30A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 9A, 10V, Power Dissipation (Max): 3.2W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V.
Weitere Produktangebote FDD5690 nach Preis ab 1.05 EUR bis 3.61 EUR
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FDD5690 | onsemi / Fairchild |
MOSFETs 60V N-Ch PowerTrench |
auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD5690 | onsemi |
Description: MOSFET N-CH 60V 30A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 9A, 10V Power Dissipation (Max): 3.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V |
auf Bestellung 1812 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDD5690 |
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Hersteller: onsemi / Fairchild
MOSFETs 60V N-Ch PowerTrench
MOSFETs 60V N-Ch PowerTrench
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.26 EUR |
| 10+ | 2.09 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.2 EUR |
| 2500+ | 1.05 EUR |
| FDD5690 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 30A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9A, 10V
Power Dissipation (Max): 3.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Description: MOSFET N-CH 60V 30A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9A, 10V
Power Dissipation (Max): 3.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
auf Bestellung 1812 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.61 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.58 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.15 EUR |