Weitere Produktangebote FDD5N50NZFTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FDD5N50NZFTM | Hersteller : ONS/FAI |
 MOSFET N-CH 500V DPAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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FDD5N50NZFTM | Hersteller : onsemi |
Description: MOSFET N-CH 500V 3.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FDD5N50NZFTM | Hersteller : onsemi |
Description: MOSFET N-CH 500V 3.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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FDD5N50NZFTM | Hersteller : onsemi / Fairchild |
MOSFET 500V N-Channel UniFET-II |
Produkt ist nicht verfügbar |