| Anzahl | Preis |
|---|---|
| 2+ | 1.81 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1.04 EUR |
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Technische Details FDD5N50UTM-WS onsemi / Fairchild
Description: MOSFET N-CH 500V 3A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDD5N50UTM-WS
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDD5N50UTM-WS | Hersteller : onsemi |
 Description: MOSFET N-CH 500V 3A DPAKInput Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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