| Anzahl | Preis |
|---|---|
| 12+ | 1.51 EUR |
| 19+ | 0.94 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.43 EUR |
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Technische Details FDD6670A UMW
Description: MOSFET N-CH 30V 15A/66A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1755 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 63W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDD6670A nach Preis ab 0.86 EUR bis 2.66 EUR
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FDD6670A | Hersteller : onsemi / Fairchild |
 MOSFETs 30V N-Ch PowerTrench Logic Level |
auf Bestellung 8347 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD6670A | Hersteller : onsemi |
Description: MOSFET N-CH 30V 15A/66A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1755 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 211 Stücke: Lieferzeit 10-14 Tag (e) |
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