FDD7N25LZTM onsemi
Hersteller: onsemiDescription: MOSFET N-CH 250V 6.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
auf Bestellung 2109 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 1.46 EUR |
| 14+ | 1.26 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.62 EUR |
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Technische Details FDD7N25LZTM onsemi
Description: MOSFET N-CH 250V 6.2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V.
Weitere Produktangebote FDD7N25LZTM nach Preis ab 0.82 EUR bis 2.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDD7N25LZTM | Hersteller : onsemi / Fairchild |
MOSFET 250V N-Channel MOSFET, UniFET |
auf Bestellung 27475 Stücke: Lieferzeit 14-28 Tag (e) |
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| FDD7N25LZTM | Hersteller : ON-Semicoductor |
N-MOSFET 6.2A 250V 550mOhm FDD7N25LZTM TFDD7n25lztm Anzahl je Verpackung: 15 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD7N25LZTM | Hersteller : ONSEMI |
Description: ONSEMI - FDD7N25LZTM - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD7N25LZTM Produktcode: 194274 |
Transistoren > MOSFET N-CH |
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FDD7N25LZTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 6.2A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD7N25LZTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 6.2A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| FDD7N25LZTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 3.7A; 56W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 3.7A Power dissipation: 56W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDD7N25LZTM | Hersteller : onsemi |
Description: MOSFET N-CH 250V 6.2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FDD7N25LZTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 3.7A; 56W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 3.7A Power dissipation: 56W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |