FDD8426H onsemi
Hersteller: onsemi
Description: MOSFET N/P-CH 40V 12A/10A DPAK
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 12A, 10A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
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Technische Details FDD8426H onsemi
Description: MOSFET N/P-CH 40V 12A/10A DPAK, Part Status: Obsolete, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 12A, 10A, Drain to Source Voltage (Vdss): 40V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Packaging: Tape & Reel (TR).

