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FDD86102

FDD86102 onsemi

fdd86102-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 100V 8A/36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
auf Bestellung 62500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.19 EUR
5000+1.18 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDD86102 onsemi

Description: MOSFET N-CH 100V 8A/36A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V, Power Dissipation (Max): 3.1W (Ta), 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V.

Weitere Produktangebote FDD86102 nach Preis ab 1.21 EUR bis 3.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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FDD86102 FDD86102 Hersteller : onsemi / Fairchild fdd86102-d.pdf MOSFETs 100V N-Channel PowerTrench
auf Bestellung 11304 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.8 EUR
10+2.01 EUR
100+1.51 EUR
500+1.29 EUR
1000+1.24 EUR
2500+1.21 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDD86102 FDD86102 Hersteller : onsemi fdd86102-d.pdf Description: MOSFET N-CH 100V 8A/36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
auf Bestellung 62546 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.42 EUR
100+1.69 EUR
500+1.41 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FDD86102 Hersteller : ONN fdd86102-d.pdf
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH