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FDD86367

FDD86367 onsemi

FDD86367-D.PDF
Hersteller: onsemi
Description: MOSFET N-CH 80V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.62 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDD86367 onsemi

Description: MOSFET N-CH 80V 100A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V, Power Dissipation (Max): 227W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote FDD86367 nach Preis ab 1.69 EUR bis 5.7 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FDD86367 FDD86367 ON Semiconductor fdd86367-d.pdf Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 3725 Stücke:
Lieferzeit 14-21 Tag (e)
52+3.39 EUR
250+1.88 EUR
500+1.81 EUR
1000+1.74 EUR
2500+1.69 EUR
Mindestbestellmenge: 52 Stücke
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FDD86367 FDD86367 ONSEMI FDD86367-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 517 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.56 EUR
37+2.31 EUR
100+1.83 EUR
Mindestbestellmenge: 24 Stücke
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FDD86367 FDD86367 onsemi FDD86367-D.PDF MOSFETs MV7 80/20V 1000A N-chanPwrTrnchMOSFET
auf Bestellung 7148 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.46 EUR
10+3.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDD86367 FDD86367 onsemi FDD86367-D.PDF Description: MOSFET N-CH 80V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17370 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.7 EUR
10+3.69 EUR
100+2.55 EUR
500+2.06 EUR
1000+1.98 EUR
Mindestbestellmenge: 4 Stücke
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FDD86367 fdd86367-d.pdf
FDD86367
Hersteller: ON Semiconductor
Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 3725 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
52+3.39 EUR
250+1.88 EUR
500+1.81 EUR
1000+1.74 EUR
2500+1.69 EUR
Mindestbestellmenge: 52 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDD86367 FDD86367-D.PDF
FDD86367
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 517 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.56 EUR
37+2.31 EUR
100+1.83 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDD86367 FDD86367-D.PDF
FDD86367
Hersteller: onsemi
MOSFETs MV7 80/20V 1000A N-chanPwrTrnchMOSFET
auf Bestellung 7148 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.46 EUR
10+3.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDD86367 FDD86367-D.PDF
FDD86367
Hersteller: onsemi
Description: MOSFET N-CH 80V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.7 EUR
10+3.69 EUR
100+2.55 EUR
500+2.06 EUR
1000+1.98 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH