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FDD8880

FDD8880 onsemi

FDD8880-D.PDF
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/58A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.62 EUR
5000+0.58 EUR
7500+0.56 EUR
Mindestbestellmenge: 2500 Stücke
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Technische Details FDD8880 onsemi

Description: MOSFET N-CH 30V 13A/58A TO252AA, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 55W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote FDD8880 nach Preis ab 0.51 EUR bis 2.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FDD8880 FDD8880 ONSEMI FDD8880-D.PDF 64b0486c2f3a4a516ccac44ee08f9abc.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.4 EUR
66+1.3 EUR
89+0.95 EUR
105+0.81 EUR
500+0.6 EUR
Mindestbestellmenge: 61 Stücke
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FDD8880 FDD8880 UMW 64b0486c2f3a4a516ccac44ee08f9abc.pdf Description: MOSFET N-CH 30V 58A DPAK
Packaging: Cut Tape (CT)
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.8 EUR
19+1.13 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 12 Stücke
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FDD8880 FDD8880 onsemi / Fairchild FDD8880-D.PDF MOSFETs 30V N-Channel PowerTrench
auf Bestellung 36412 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.26 EUR
10+1.26 EUR
100+0.88 EUR
500+0.77 EUR
1000+0.69 EUR
2500+0.62 EUR
5000+0.61 EUR
Mindestbestellmenge: 2 Stücke
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FDD8880 FDD8880 onsemi FDD8880-D.PDF Description: MOSFET N-CH 30V 13A/58A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
auf Bestellung 10498 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.37 EUR
15+1.5 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 9 Stücke
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FDD8880 FDD8880-D.PDF 64b0486c2f3a4a516ccac44ee08f9abc.pdf
FDD8880
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
61+1.4 EUR
66+1.3 EUR
89+0.95 EUR
105+0.81 EUR
500+0.6 EUR
Mindestbestellmenge: 61 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDD8880 64b0486c2f3a4a516ccac44ee08f9abc.pdf
FDD8880
Hersteller: UMW
Description: MOSFET N-CH 30V 58A DPAK
Packaging: Cut Tape (CT)
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.8 EUR
19+1.13 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDD8880 FDD8880-D.PDF
FDD8880
Hersteller: onsemi / Fairchild
MOSFETs 30V N-Channel PowerTrench
auf Bestellung 36412 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.26 EUR
10+1.26 EUR
100+0.88 EUR
500+0.77 EUR
1000+0.69 EUR
2500+0.62 EUR
5000+0.61 EUR
Mindestbestellmenge: 2 Stücke
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FDD8880 FDD8880-D.PDF
FDD8880
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/58A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
auf Bestellung 10498 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
15+1.5 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH