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FDFMA2N028Z

FDFMA2N028Z onsemi

fdfma2n028z-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.4W (Tj)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
6000+0.4 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDFMA2N028Z onsemi

Description: MOSFET N-CH 20V 3.7A 6MICROFET, Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 6-MicroFET (2x2), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.4W (Tj), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-VDFN Exposed Pad, Packaging: Tape & Reel (TR).

Weitere Produktangebote FDFMA2N028Z nach Preis ab 0.74 EUR bis 1.81 EUR

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FDFMA2N028Z FDFMA2N028Z onsemi fdfma2n028z-d.pdf Description: MOSFET N-CH 20V 3.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.4W (Tj)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
16+1.13 EUR
100+0.74 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
FDFMA2N028Z ON Semiconductor / Fairchild FDFMA2N028Z-1305521.pdf MOSFET 20V N-Ch PT MFET SCHOTTKY
auf Bestellung 4246 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDFMA2N028Z fdfma2n028z-d.pdf
FDFMA2N028Z
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.4W (Tj)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
16+1.13 EUR
100+0.74 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
FDFMA2N028Z FDFMA2N028Z-1305521.pdf
Hersteller: ON Semiconductor / Fairchild
MOSFET 20V N-Ch PT MFET SCHOTTKY
auf Bestellung 4246 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH