auf Bestellung 2408 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 953+ | 0.58 EUR |
| 1009+ | 0.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDFMA2P853 ON Semiconductor
Description: MOSFET P-CH 20V 3A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V.
Weitere Produktangebote FDFMA2P853 nach Preis ab 0.53 EUR bis 0.60 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDFMA2P853 | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 20V 3A 6-Pin WDFN EP T/R |
auf Bestellung 19338 Stücke: Lieferzeit 14-21 Tag (e) |
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FDFMA2P853 | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3A 6MICROFET Packaging: Bulk Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V |
auf Bestellung 2131833 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDFMA2P853 | Hersteller : FAI |
QFN 0632+ |
auf Bestellung 1306 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDFMA2P853 | Hersteller : FAIRCHILD |
09+ |
auf Bestellung 9018 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDFMA2P853 | Hersteller : FAIROHILD |
QFN |
auf Bestellung 10900 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDFMA2P853 | Hersteller : FSC |
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auf Bestellung 1845 Stücke: Lieferzeit 21-28 Tag (e) |
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FDFMA2P853 | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V |
Produkt ist nicht verfügbar |
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FDFMA2P853 | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V |
Produkt ist nicht verfügbar |
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FDFMA2P853 | Hersteller : onsemi / Fairchild |
MOSFETs MLP 2X2 DUAL INTEGRATED PCH PO |
Produkt ist nicht verfügbar |