FDFMA3N109 ON Semiconductor
auf Bestellung 64877 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 887+ | 0.61 EUR |
| 1000+ | 0.56 EUR |
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Technische Details FDFMA3N109 ON Semiconductor
Description: MOSFET N-CH 30V 2.9A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc), Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V.
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| FDFMA3N109 | Hersteller : ON Semiconductor / Fairchild |
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FDFMA3N109 | Hersteller : ON Semiconductor |
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FDFMA3N109 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 2.9A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V |
Produkt ist nicht verfügbar |