FDFMA3N109 ON Semiconductor

Description: MOSFET N-CH 30V 2.9A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc), Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V.