FDG6301N-F085P ON Semiconductor

Description: MOSFET 2N-CH 25V 0.22A SC70-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), Drain to Source Voltage (Vdss): 25V, Power - Max: 300mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Grade: Automotive, Supplier Device Package: SC-70-6, Qualification: AEC-Q101, Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V.