FDG6304P TECH PUBLIC
Hersteller: TECH PUBLIC
Mosfet Array 2 P-Channel (Dual) 25V 410mA 300mW Surface Mount SC-88 (SC-70-6) FDG6304P TFDG6304p
Anzahl je Verpackung: 100 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.35 EUR |
Produktrezensionen
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Technische Details FDG6304P TECH PUBLIC
Description: MOSFET 2P-CH 25V 0.41A SC88, Supplier Device Package: SC-88 (SC-70-6), Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 410mA, Drain to Source Voltage (Vdss): 25V, Power - Max: 300mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDG6304P nach Preis ab 0.27 EUR bis 1.34 EUR
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FDG6304P | TECH PUBLIC |
Mosfet Array 2 P-Channel (Dual) 25V 410mA 300mW Surface Mount SC-88 (SC-70-6) FDG6304P TFDG6304p Anzahl je Verpackung: 100 Stücke |
auf Bestellung 439 Stücke: Lieferzeit 7-14 Tag (e) |
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FDG6304P | onsemi |
Description: MOSFET 2P-CH 25V 0.41A SC88 Supplier Device Package: SC-88 (SC-70-6) Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Current - Continuous Drain (Id) @ 25°C: 410mA Drain to Source Voltage (Vdss): 25V Power - Max: 300mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 449 Stücke: Lieferzeit 10-14 Tag (e) |
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FDG6304P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET x2 Technology: PowerTrench® Case: SC70-6; SC88; SOT363 Polarisation: unipolar Drain-source voltage: -25V Drain current: -0.41A Gate charge: 1.5nC Power dissipation: 0.3W On-state resistance: 1.9Ω Gate-source voltage: ±8V Kind of package: reel; tape |
auf Bestellung 1210 Stücke: Lieferzeit 14-21 Tag (e) |
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FDG6304P | onsemi / Fairchild |
MOSFETs SC70-6 P-CH -25V |
auf Bestellung 1358 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDG6304P |
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Hersteller: TECH PUBLIC
Mosfet Array 2 P-Channel (Dual) 25V 410mA 300mW Surface Mount SC-88 (SC-70-6) FDG6304P TFDG6304p
Anzahl je Verpackung: 100 Stücke
Mosfet Array 2 P-Channel (Dual) 25V 410mA 300mW Surface Mount SC-88 (SC-70-6) FDG6304P TFDG6304p
Anzahl je Verpackung: 100 Stücke
auf Bestellung 439 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.35 EUR |
| FDG6304P |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 25V 0.41A SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 25V 0.41A SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.53 EUR |
| FDG6304P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.41A
Gate charge: 1.5nC
Power dissipation: 0.3W
On-state resistance: 1.9Ω
Gate-source voltage: ±8V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.41A
Gate charge: 1.5nC
Power dissipation: 0.3W
On-state resistance: 1.9Ω
Gate-source voltage: ±8V
Kind of package: reel; tape
auf Bestellung 1210 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 119+ | 0.6 EUR |
| 179+ | 0.4 EUR |
| 250+ | 0.34 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
| FDG6304P |
|
Hersteller: onsemi / Fairchild
MOSFETs SC70-6 P-CH -25V
MOSFETs SC70-6 P-CH -25V
auf Bestellung 1358 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.34 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |
| 3000+ | 0.3 EUR |
| 9000+ | 0.27 EUR |