FDG6306P onsemi
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 600MA SC88
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 420mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V
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Technische Details FDG6306P onsemi
Description: MOSFET 2P-CH 20V 600MA SC88, Current - Continuous Drain (Id) @ 25°C: 600mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 300mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Supplier Device Package: SC-88 (SC-70-6), Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 420mOhm @ 600mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V.
Weitere Produktangebote FDG6306P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDG6306P | onsemi |
Description: MOSFET 2P-CH 20V 600MA SC88 Supplier Device Package: SC-88 (SC-70-6) Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Rds On (Max) @ Id, Vgs: 420mOhm @ 600mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V Current - Continuous Drain (Id) @ 25°C: 600mA Drain to Source Voltage (Vdss): 20V Power - Max: 300mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FDG6306P | onsemi / Fairchild |
MOSFET P-Ch PowerTrench Specified 2.5V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDG6306P |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 600MA SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 420mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 600MA SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 420mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDG6306P |
|
Hersteller: onsemi / Fairchild
MOSFET P-Ch PowerTrench Specified 2.5V
MOSFET P-Ch PowerTrench Specified 2.5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH