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FDG6335N

FDG6335N onsemi

fdg6335n-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 0.7A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA
Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.3 EUR
6000+0.29 EUR
9000+0.27 EUR
30000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDG6335N onsemi

Description: MOSFET 2N-CH 20V 0.7A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 700mA, Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V, Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-88 (SC-70-6), Part Status: Active.

Weitere Produktangebote FDG6335N nach Preis ab 0.3 EUR bis 1.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
FDG6335N FDG6335N onsemi fdg6335n-d.pdf Description: MOSFET 2N-CH 20V 0.7A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA
Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
auf Bestellung 46979 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
23+0.77 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.34 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDG6335N FDG6335N onsemi / Fairchild FDG6335N_D-2312732.pdf MOSFETs FDG6335N
auf Bestellung 12279 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.23 EUR
10+0.8 EUR
100+0.54 EUR
500+0.43 EUR
1000+0.39 EUR
3000+0.3 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDG6335N fdg6335n-d.pdf
FDG6335N
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 0.7A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA
Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
auf Bestellung 46979 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
23+0.77 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.34 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDG6335N FDG6335N_D-2312732.pdf
FDG6335N
Hersteller: onsemi / Fairchild
MOSFETs FDG6335N
auf Bestellung 12279 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.23 EUR
10+0.8 EUR
100+0.54 EUR
500+0.43 EUR
1000+0.39 EUR
3000+0.3 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH