FDI150N10 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 57A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
auf Bestellung 643 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.44 EUR |
| 50+ | 2.74 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2.03 EUR |
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Technische Details FDI150N10 onsemi
Description: MOSFET N-CH 100V 57A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 49A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V.
Weitere Produktangebote FDI150N10 nach Preis ab 2.08 EUR bis 5.49 EUR
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| FDI150N10 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: I2PAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
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