FDL100N50F

Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: UniFET™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 500V
Drain current: 100A
Gate charge: 238nC
On-state resistance: 55mΩ
Gate-source voltage: ±30V
Power dissipation: 2.5kW
Polarisation: unipolar

Hersteller: onsemi
MOSFETs UniFET 500V

Hersteller: onsemi / Fairchild
MOSFETs UniFET 500V

Hersteller: onsemi
Description: MOSFET N-CH 500V 100A TO264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 50A, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V

Hersteller: ON-Semiconductor
Transistor N-Channel MOSFET; 500V; +/-30V; 43mOhm; 100A; 2,5kW; -55°C~150°C; FDL100N50F TFDL100n50f
Anzahl je Verpackung: 5 Stücke