auf Bestellung 2346 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.22 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.16 EUR |
| 3000+ | 1.12 EUR |
| 6000+ | 1.08 EUR |
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Technische Details FDMA037N08LC onsemi
Description: MOSFET N-CH 80V 6A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 36.5mOhm @ 4A, 10V, Power Dissipation (Max): 2.4W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 20µA, Supplier Device Package: 6-WDFN (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 40 V.
Weitere Produktangebote FDMA037N08LC
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDMA037N08LC | Hersteller : onsemi |
 Description: MOSFET N-CH 80V 6A 6WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36.5mOhm @ 4A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 20µA Supplier Device Package: 6-WDFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 40 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA037N08LC | Hersteller : onsemi |
Description: MOSFET N-CH 80V 6A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36.5mOhm @ 4A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 20µA Supplier Device Package: 6-WDFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 40 V |
auf Bestellung 14663 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA037N08LC | Hersteller : ONSEMI |
Description: ONSEMI - FDMA037N08LC - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 120901 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMA037N08LC | Hersteller : ON Semiconductor |
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auf Bestellung 2985 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMA037N08LC | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 6A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMA037N08LC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6A; Idm: 55A; 2.4W; WDFN6 Mounting: SMD Drain-source voltage: 80V Drain current: 6A On-state resistance: 61mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 55A Case: WDFN6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMA037N08LC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6A; Idm: 55A; 2.4W; WDFN6 Mounting: SMD Drain-source voltage: 80V Drain current: 6A On-state resistance: 61mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 55A Case: WDFN6 |
Produkt ist nicht verfügbar |