FDMA1029PZ onsemi
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.1A 6WDFN
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.42 EUR |
| 6000+ | 0.38 EUR |
| 9000+ | 0.37 EUR |
| 15000+ | 0.35 EUR |
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Technische Details FDMA1029PZ onsemi
Description: MOSFET 2P-CH 20V 3.1A 6WDFN, Part Status: Active, Supplier Device Package: 6-WDFN (2x2), Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A, Drain to Source Voltage (Vdss): 20V, Power - Max: 700mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMA1029PZ nach Preis ab 0.49 EUR bis 1.71 EUR
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FDMA1029PZ | onsemi / Fairchild |
MOSFET -20V Dual P-Channel PowerTrench MOSFET |
auf Bestellung 11785 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA1029PZ | onsemi |
Description: MOSFET 2P-CH 20V 3.1A 6WDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 6-WDFN (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.1A Drain to Source Voltage (Vdss): 20V Power - Max: 700mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad |
auf Bestellung 86974 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDMA1029PZ |
|
Hersteller: onsemi / Fairchild
MOSFET -20V Dual P-Channel PowerTrench MOSFET
MOSFET -20V Dual P-Channel PowerTrench MOSFET
auf Bestellung 11785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.63 EUR |
| 10+ | 1.43 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.7 EUR |
| 3000+ | 0.62 EUR |
| 6000+ | 0.6 EUR |
| FDMA1029PZ |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.1A 6WDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Description: MOSFET 2P-CH 20V 3.1A 6WDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
auf Bestellung 86974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.71 EUR |
| 20+ | 1.07 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.49 EUR |