FDMA3023PZ onsemi
Hersteller: onsemiDescription: MOSFET 2P-CH 30V 2.9A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
auf Bestellung 16500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.53 EUR |
| 6000+ | 0.49 EUR |
| 9000+ | 0.47 EUR |
| 15000+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMA3023PZ onsemi
Description: MOSFET 2P-CH 30V 2.9A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Part Status: Active.
Weitere Produktangebote FDMA3023PZ nach Preis ab 0.50 EUR bis 2.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMA3023PZ | Hersteller : onsemi / Fairchild |
MOSFETs 30V 2.9A Dual P Ch PowerTrench |
auf Bestellung 30368 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMA3023PZ | Hersteller : onsemi |
Description: MOSFET 2P-CH 30V 2.9A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active |
auf Bestellung 17490 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FDMA3023PZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 2.9A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FDMA3023PZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.4W; WDFN6 Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 0.14Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: WDFN6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| FDMA3023PZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.4W; WDFN6 Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 0.14Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: WDFN6 |
Produkt ist nicht verfügbar |