FDMA410NZ onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 2+ | 1.52 EUR |
| 10+ | 1.3 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.67 EUR |
| 3000+ | 0.62 EUR |
| 6000+ | 0.6 EUR |
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Technische Details FDMA410NZ onsemi / Fairchild
Description: MOSFET N-CH 20V 9.5A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V, Power Dissipation (Max): 2.4W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V.
Weitere Produktangebote FDMA410NZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDMA410NZ | ON Semiconductor / Fairchild |
 MOSFET 20V Single N-Ch 1.5V Specified PowerTrnch |
auf Bestellung 5984 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
FDMA410NZ | onsemi |
Description: MOSFET N-CH 20V 9.5A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMA410NZ |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET 20V Single N-Ch 1.5V Specified PowerTrnch
MOSFET 20V Single N-Ch 1.5V Specified PowerTrnch
auf Bestellung 5984 Stücke:
Lieferzeit 10-14 Tag (e)
| FDMA410NZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 9.5A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
Description: MOSFET N-CH 20V 9.5A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)