FDMA86108LZ onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.79 EUR |
| 6000+ | 0.75 EUR |
| 9000+ | 0.74 EUR |
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Technische Details FDMA86108LZ onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET, Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-MicroFET (2x2), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.4W (Ta), Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMA86108LZ nach Preis ab 0.73 EUR bis 2.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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FDMA86108LZ | onsemi / Fairchild |
MOSFETs Single N-Channel PowerTrench MOSFET |
auf Bestellung 17402 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA86108LZ | onsemi |
Description: MOSFET N-CH 100V 2.2A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 53131 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA86108LZ | ON Semiconductor / Fairchild |
MOSFET FET 100V 243.0 MOHM MLP |
auf Bestellung 4247 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FDMA86108LZ | ONN |
|
auf Bestellung 2320 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMA86108LZ |
|
Hersteller: onsemi / Fairchild
MOSFETs Single N-Channel PowerTrench MOSFET
MOSFETs Single N-Channel PowerTrench MOSFET
auf Bestellung 17402 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.85 EUR |
| 10+ | 1.51 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.77 EUR |
| 3000+ | 0.73 EUR |
| FDMA86108LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 53131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 2.96 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.86 EUR |
| FDMA86108LZ |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET FET 100V 243.0 MOHM MLP
MOSFET FET 100V 243.0 MOHM MLP
auf Bestellung 4247 Stücke:
Lieferzeit 10-14 Tag (e)
| FDMA86108LZ |
|
Hersteller: ONN
auf Bestellung 2320 Stücke:
Lieferzeit 21-28 Tag (e)