FDMA86251 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 150V 2.4A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V
auf Bestellung 16995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.62 EUR |
| 6000+ | 0.59 EUR |
| 9000+ | 0.56 EUR |
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Technische Details FDMA86251 onsemi
Description: MOSFET N-CH 150V 2.4A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V, Power Dissipation (Max): 2.4W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V.
Weitere Produktangebote FDMA86251 nach Preis ab 0.55 EUR bis 1.5 EUR
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FDMA86251 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 2.4A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V |
auf Bestellung 16995 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA86251 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 2.4A 6-Pin MicroFET EP T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMA86251 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.4A; Idm: 12A; 2.4W; MicroFET Drain-source voltage: 150V Drain current: 2.4A On-state resistance: 0.175Ω Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 12A Mounting: SMD Case: MicroFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| FDMA86251 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.4A; Idm: 12A; 2.4W; MicroFET Drain-source voltage: 150V Drain current: 2.4A On-state resistance: 0.175Ω Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 12A Mounting: SMD Case: MicroFET |
Produkt ist nicht verfügbar |