FDMA910PZ onsemi
Hersteller: onsemi
Description: MOSFET P-CH 20V 9.4A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 10 V
Description: MOSFET P-CH 20V 9.4A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 10 V
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.51 EUR |
15+ | 1.24 EUR |
100+ | 0.96 EUR |
500+ | 0.82 EUR |
1000+ | 0.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMA910PZ onsemi
Description: MOSFET P-CH 20V 9.4A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V, Power Dissipation (Max): 2.4W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 10 V.
Weitere Produktangebote FDMA910PZ nach Preis ab 0.89 EUR bis 2.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDMA910PZ | Hersteller : onsemi / Fairchild | MOSFET P-CHAN -20V -9.4A |
auf Bestellung 3931 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMA910PZ | Hersteller : ON Semiconductor | Trans MOSFET P-CH 20V 9.4A 6-Pin WDFN EP T/R |
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FDMA910PZ | Hersteller : ON Semiconductor | Trans MOSFET P-CH 20V 9.4A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMA910PZ | Hersteller : ON Semiconductor | Trans MOSFET P-CH 20V 9.4A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMA910PZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9.4A Pulsed drain current: -45A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±8V On-state resistance: 34mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMA910PZ | Hersteller : onsemi |
Description: MOSFET P-CH 20V 9.4A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 10 V |
Produkt ist nicht verfügbar |
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FDMA910PZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9.4A Pulsed drain current: -45A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±8V On-state resistance: 34mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |