FDMC0310AS-F127 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-MLP (3.3x3.3)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.68 EUR |
| 6000+ | 0.63 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC0310AS-F127 onsemi
Description: MOSFET N-CH 30V 21A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V, Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-MLP (3.3x3.3), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V.
Weitere Produktangebote FDMC0310AS-F127 nach Preis ab 0.71 EUR bis 2.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDMC0310AS-F127 | onsemi |
MOSFETs Computing MOSFET |
auf Bestellung 3975 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC0310AS-F127 | onsemi |
Description: MOSFET N-CH 30V 21A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-MLP (3.3x3.3) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMC0310AS-F127 | ON Semiconductor |
Trans MOSFET N-CH 30V 19A 8-Pin WDFN EP T/R |
auf Bestellung 2633 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMC0310AS-F127 |
|
Hersteller: onsemi
MOSFETs Computing MOSFET
MOSFETs Computing MOSFET
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.83 EUR |
| 10+ | 1.33 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.93 EUR |
| 3000+ | 0.81 EUR |
| 6000+ | 0.71 EUR |
| FDMC0310AS-F127 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-MLP (3.3x3.3)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
Description: MOSFET N-CH 30V 21A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-MLP (3.3x3.3)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.87 EUR |
| 12+ | 1.81 EUR |
| 50+ | 1.36 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.94 EUR |
| FDMC0310AS-F127 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 19A 8-Pin WDFN EP T/R
Trans MOSFET N-CH 30V 19A 8-Pin WDFN EP T/R
auf Bestellung 2633 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 720+ | 0.93 EUR |
| 1000+ | 0.84 EUR |