FDMC0310AS-F127 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V 21A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-MLP (3.3x3.3)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.54 EUR |
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Technische Details FDMC0310AS-F127 onsemi
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8, Case: MLP8, Mounting: SMD, Kind of package: reel; tape, Type of transistor: N-MOSFET, Technology: PowerTrench®, Polarisation: unipolar, Gate charge: 52nC, On-state resistance: 5.8mΩ, Gate-source voltage: ±20V, Drain current: 21A, Drain-source voltage: 30V, Power dissipation: 36W, Pulsed drain current: 100A, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FDMC0310AS-F127 nach Preis ab 0.54 EUR bis 1.78 EUR
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FDMC0310AS-F127 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 21A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-MLP (3.3x3.3) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V |
auf Bestellung 32742 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC0310AS-F127 | Hersteller : onsemi / Fairchild |
MOSFETs Computing MOSFET |
auf Bestellung 2163 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMC0310AS-F127 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 19A T/R |
Produkt ist nicht verfügbar |
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| FDMC0310AS-F127 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8 Case: MLP8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 52nC On-state resistance: 5.8mΩ Gate-source voltage: ±20V Drain current: 21A Drain-source voltage: 30V Power dissipation: 36W Pulsed drain current: 100A Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC0310AS-F127 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8 Case: MLP8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 52nC On-state resistance: 5.8mΩ Gate-source voltage: ±20V Drain current: 21A Drain-source voltage: 30V Power dissipation: 36W Pulsed drain current: 100A Kind of channel: enhancement |
Produkt ist nicht verfügbar |